| PART |
Description |
Maker |
| AS8NVLC512K32QC-45XT AS8NVLC512K32Q-25XT AS8NVLC51 |
512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage
|
Austin Semiconductor
|
| CY14B104L-BA15XI CY14B104L-BA15XIT CY14B104L-BA25X |
4-Mbit (512K x 8/256K x 16) nvSRAM
|
Cypress Semiconductor
http://
|
| CYM1846V33PZ-35C CYM1846V33 CYM1846V33P8-12C CYM18 |
Memory 内存
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PZMA72
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PSMA72
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72
512K x 32 3.3V Static RAM Module 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA72
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MCM32512S10 MCM32L512S10 MCM32512 MCM32512S70 MCM3 |
512K x 32 Bit Dynamic Random Access Memory Module 512K X 32 FAST PAGE DRAM MODULE, 80 ns, SMA72
512K x 32 Bit Dynamic Random Access Memory Module 512K X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
MOTOROLA[Motorola, Inc]
Panasonic, Corp.
Motorola Mobility Holdings, Inc.
|
| CY14E108L-BA45XCT CY14E108N-BA45XCT CY14E108N-ZSP4 |
512K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 45 ns, PBGA48 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
8 Mbit (1024K x 8/512K x 16) nvSRAM
|
Cypress Semiconductor, Corp.
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| 89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位）立方米的SRAM
|
Maxwell Technologies, Inc
|
| BQ4832YMA-85 |
RTC Module With 32Kx8 NVSRAM
|
N.A.
|
| SST29EE010A-90-4C-PH SST29EE010A-120-4C-U2 SST29LE |
4 Mbit (512K x 8/256K x 16) nvSRAM
128Kx8 EEPROM 128Kx8 EEPROM
|
Silicon Storage Technology, Inc.
|
| WF512K32F-90H1C5A |
512K X 32 FLASH 5V PROM MODULE, 90 ns, CHMA66
512K X 32 FLASH 5V PROM MODULE, 90 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
